On the dynamic inventory of deuterium implanted in graphiteSCHERZER, B. M. U.Journal of nuclear materials. 1989, Vol 168, Num 1-2, pp 121-124, issn 0022-3115, 4 p.Article

Influence of H-C bonds on the stopping power of hard and soft carbonized layersBOUTARD, D; MÖLLER, W; SCHERZER, B. M. U et al.Physical review. B, Condensed matter. 1988, Vol 38, Num 5, pp 2988-2994, issn 0163-1829, 7 p.Article

Do H-SIA complexes interact with implanted He in Mo? = Les complexes H-SIA interagissent-ils avec l'hélium implanté dans le molybdène?SCHERZER, B. M. U; BORGESEN, P.Radiation effects. 1983, Vol 76, Num 5, pp 169-172, issn 0033-7579Article

Thermal desorption spectroscopy of He from Ni at and below saturation = Spectroscopie de thermodésorption de He à partir de Ni et au-dessous de la saturationEHRENBERG, J; SCHERZER, B. M. U; BEHRISCH, R et al.Radiation effects. 1983, Vol 78, Num 1-4, pp 405-416, issn 0033-7579Article

Hydrogen isotope exchange in amorphous hydrocarbon layers : plasma-deposited a-C:H and ions-saturated carbonBOUTARD, D; MOÊLLER, W; SCHERZER, B. M. U et al.Radiation effects and defects in solids. 1990, Vol 114, Num 4, pp 281-289, issn 1042-0150, 9 p.Article

Subsurface molecule formation in hydrogen-implanted graphiteMÖLLER, W; SCHERZER, B. M. U.Applied physics letters. 1987, Vol 50, Num 26, pp 1870-1872, issn 0003-6951Article

High-fluence He-implantation in Ni trapping, re-emission, and surface modification = Implantation d'hélium à dose élevée dans Ni, piégeage, ré-émission et modification de la surfaceSCHERZER, B. M. U; EHRENBERG, J; BEHRISCH, R et al.Radiation effects. 1983, Vol 78, Num 1-4, pp 417-426, issn 0033-7579Article

Trapping and release of D from saturated implants in graphiteSCHERZER, B. M. U; WANG, J; MOÊLLER, W et al.Journal of nuclear materials. 1990, Vol 176-77, pp 208-212, issn 0022-3115, 5 p.Conference Paper

Permeation of implanted deuterium through Ni near room temperature = Perméation du deutérium implanté à travers Ni près de la température ambianteBØRGESEN, P; SCHERZER, B. M. U; MÖLLER, W et al.Journal of applied physics. 1985, Vol 57, Num 8, pp 2733-2738, issn 0021-8979Article

Low-temperature dynamic depth profile measurements of implanted deuterium in nickel : precipitation of nickel deuteridePETITPIERRE, O; MOÊLLER, W; SCHERZER, B. M. U et al.Journal of applied physics. 1990, Vol 68, Num 7, pp 3169-3177, issn 0021-8979, 9 p.Article

Reemission of deuterium from graphite at temperatures above 1100 KFRANZEN, P; MÖLLER, W; SCHERZER, B. M. U et al.Journal of nuclear materials. 1990, Vol 172, Num 3, pp 293-296, issn 0022-3115Article

Dynamic depth profile measurements of implanted deuterium in nickel = Mesures dynamiques du profil de profondeur du deutérium implanté dans le nickelPETITPIERRE, O; MÖLLER, W; SCHERZER, B. M. U et al.Journal of applied physics. 1989, Vol 65, Num 5, pp 1893-1897, issn 0021-8979Article

Ion-induced depletion of hydrogen from a soft carbonized layerBOUTARD, D; SCHERZER, B. M. U; MÖLLER, W et al.Journal of applied physics. 1989, Vol 65, Num 10, pp 3833-3837, issn 0021-8979, 5 p.Article

Trapping and reflection coefficients for deuterium in graphite at oblique incidenceCHEN, C. K; SCHERZER, B. M. U; ECKSTEIN, W et al.Applied physics. A, Solids and surfaces. 1984, Vol 33, Num 4, pp 265-268, issn 0721-7250Article

Search for fusion reactions between deuterium atoms implanted into titaniumBEHRISCH, R; MÖLLER, W; ROTH, J et al.Nuclear fusion. 1989, Vol 29, Num 7, pp 1187-1190, issn 0029-5515, 4 p.Article

Bilayer growth in a metallic system : Fe on Cu(100)GLATZEL, H; FAUSTER, T; SCHERZER, B. M. U et al.Surface science. 1991, Vol 254, Num 1-3, pp 58-64, issn 0039-6028Article

Damage and deuterium trapping in highly-oriented pyrolytic graphiteSIEGELE, R; ROTH, J; SCHERZER, B. M. U et al.Journal of applied physics. 1993, Vol 73, Num 5, pp 2225-2233, issn 0021-8979Article

Theral desorption of D₂ and CD₄ from bulk-boronized graphitesALIMOV, V. K; SCHWÖRER, R; SCHERZER, B. M. U et al.Journal of nuclear materials. 1992, Vol 187, Num 3, pp 191-196, issn 0022-3115Article

Trapping of D in SiC and damage due to implantationSIEGELE, R; WITHROW, S. P; ROTH, J et al.Journal of nuclear materials. 1990, Vol 176-77, pp 1010-1017, issn 0022-3115, 8 p.Conference Paper

Oxyge retention in D-ion-irradiated B4C and boron-doped graphitesALIMOV, V. K; ZALAVUTDINOV, R. K; SCHERZER, B. M. U et al.Journal of nuclear materials. 1994, Vol 212-15, Num B, pp 1461-1466, issn 0022-3115Conference Paper

Evolution of CD₄ from bulk boronized graphite and B₄C during deuterium implantationSCHERZER, B. M. U; ALIMOV, V. K.Journal of nuclear materials. 1992, Vol 196-98, pp 703-707, issn 0022-3115Conference Paper